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集成电路封装级失效及其定位 被引量:5

Package Level Failure and Failure Localization of the Integrated Circuit
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摘要 失效分析中有许多类型的封装级失效。由于封装材料限制或者无损检测要求,无法从外观直接观察到失效点,需要借助于设备进行失效定位才能快速、准确地进行分析。总结了集成电路封装级失效的几种常见失效机理和失效原因,提出三种有效的分析手段和分析方法进行失效定位:X射线检测、超声扫描声学显微镜以及热激光激发光致电阻变化(OBIRCH)技术,分别用于元器件结构观察、不同材料界面特性分析和键合损伤位置定位。从倒装芯片封装、陶瓷封装、塑料封装和金铝键合短路四个失效分析的实际案例出发,阐明三种封装级失效定位手段应用的领域、特点和局限性。结果表明在封装级失效中,通孔断裂开路、焊料桥连短路、键合损伤和界面分层等缺陷能够准确地被定位进而分析。 Package level failures are widely found in failure analysis. For the limitation of the package material or non-destructive evaluation,external visual inspection is not allowed,new equipment and methods are suggested to assist fast and precise analysis. Some common failure mechanisms and root causes were described in integrated circuit package failure. Three efficient analysis means and methods were suggested for the discussed failure localization,i. e. X-ray system,scanning acoustic microscopy and optical beam induced resistance change( OBIRCH) based thermal laser stimulation technique.They were used for structural analysis for electronic components,interfaces analysis between different materials and localization of bonding defects,respectively. The research gave four failure analysis case studies,including filp-chip packaging, ceramic packages, plastic packages and Au-Al bonding failures,and the applied area,characteristics and limitations of the three localization methods were illustrated. The results confirmed that packaging failures,such as via crack opening defect,solder bridging short defect,bonding damage and interface delamination could be well isolated and analyzed.
出处 《半导体技术》 CAS CSCD 北大核心 2015年第6期455-459,477,共6页 Semiconductor Technology
关键词 集成电路 封装级失效 光致电阻变化(OBIRCH) 失效分析 失效定位 扫描声学显微镜 ( SAM) integrated circuit package level failure optical beam induced resistance change(OBIRCH) failure analysis failure localization scanning acoustic microscopy (SAM)
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参考文献11

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