期刊文献+

基于环形振荡器的绑定前硅通孔测试 被引量:5

Ring Oscillator-Based Prebond TSV Test
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摘要 硅通孔(TSV)的电阻开路故障和泄漏故障会降低三维集成电路的良率和可靠性,为在制造流中尽早排除故障TSV,提出一种基于环形振荡器的绑定前TSV测试方法.首先将环形振荡器的TSV接收器分为一般反相器和施密特触发器,并比较这2种环形振荡器的测试分辨率;然后把施密特触发器作为TSV接收器引入绑定前TSV测试;为防止误测或误诊断,采用多个低电压测试TSV.基于45 nm PTM CMOS工艺的HSPICE模拟结果表明,与现有同类方法相比,该方法具有更高的测试分辨率,且能测试大电容TSV和同时存在电阻开路故障和泄漏故障的TSV. Resistive open fault and leakage fault in TSV decrease the yield and reliability of 3D-ICs. To screen out these faults early in the manufacturing flow, a prebond TSV test method using ring oscillator is proposed. Firstly, according to different TSV receivers which can be normal inverter or Schmitt-Trigger in-verter, we divide the ring oscillators into two types and compare their test resolution. Then, the Schmitt-Trigger inverter is used as TSV receiver in our test structure. In order to avoid the wrong test or di-agnosis, TSV is tested in multiple low voltage levels. Experimental results with HSPICE simulations using 45nm CMOS technology show that the proposed test scheme achieved a higher resolution compared to pre-vious works. In addition, the test scheme can be used to test large capacitance TSV and the TSV which exists resistance open fault and leakage fault.
出处 《计算机辅助设计与图形学学报》 EI CSCD 北大核心 2015年第11期2177-2183,共7页 Journal of Computer-Aided Design & Computer Graphics
基金 国家自然科学基金(61274036 61371025 61474036 61204046) 安徽省高校省级自然科学研究重大项目(KJ2014ZD12)
关键词 三维集成电路 硅通孔 绑定前测试 电阻开路故障 泄漏故障 3D-ICs through silicon via prebond test resistive open fault leakage fault
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参考文献15

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二级参考文献61

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