期刊文献+

CsI(Tl)闪烁体软X光能量响应的模拟研究 被引量:4

Soft X-ray energy corresponding of CsI(Tl) scintillator
下载PDF
导出
摘要 Csl(-r1)闪烁体是X光转换为可见光比较晕要的一个部件,在惯性约束聚变中的x光诊断等方面有着卜分晕要的应用。通过Geant4软件较为全面地分析了CsI(T1)闪烁体软X光能量响应,模拟了1~5keV的软X光入射不同厚度(20,30,50μm)CsI(TI)的能量沉积谱,探究了粒子之间相互作用的物理过程,并比较了不同能量软x光在不同厚度CsI(T1)闪烁体巾的沉积效率。仿真结果表明,随着CsI(T1)闪烁体厚度的增加,软x光侄CsI(TI)闪烁体中沉积的能量也逐渐增加,沉积效率与CsI(T1)闪烁体厚度成正比。模拟研究为选择合适厚度的闪烁体做低能段软X光探测实验做铺垫。 The CsI(T1) scintillator is a key part for the transition from X-ray to visible light in X-ray detectors, which is ofcrucial importance in X-ray diagnosis for inertial confined fusion. Geant4 is used to imitate the mechanism of the energy depositionof X-ray in the CsI(T1) scintillator. 1-5 keV X-rays could deposit energies into the CsI(T1) scintillator with different thickness(20, 30, or 50 μm). The deposition energy and deposition efficiency are compared. The results show that the deposition energyincreases with the increase of CsI(T1) scintillator thickness. This theoretically investigation has provided valid proofs for the prep-aration of the forthcoming experimental study.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2015年第12期92-96,共5页 High Power Laser and Particle Beams
基金 中国工程物理研究院科学技术发展基金重点项目:2013A0102002
关键词 Csl(T1)闪烁体 软X光 能量响应 GEANT4 CsI(T1) scintillator soft X-ray energy corresponding Geant 4
  • 引文网络
  • 相关文献

参考文献12

二级参考文献74

  • 1江孝国,顾镇南.新型掺Tb^(3+)硅酸盐发光玻璃的研制[J].强激光与粒子束,2005,17(3):325-329. 被引量:4
  • 2邵军明,路宏年,蔡慧.X射线成像的一种点扩展函数模型[J].光学学报,2005,25(8):1148-1152. 被引量:9
  • 3江孝国,王伟,吴建华,王婉丽.CsI∶Tl晶体对高能X光照射量的响应关系研究[J].光学学报,2005,25(10):1429-1432. 被引量:5
  • 4王明泉,宋文爱,刘以农,张丽.高分辨率便携式管道锈蚀检测仪[J].测试技术学报,2006,20(3):208-212. 被引量:2
  • 5胡昕,江少恩,崔延莉,黄翼翔,丁永坤,刘忠礼,易荣清,李朝光,张景和,张华全.一种时间分辨三通道软X射线光谱仪[J].物理学报,2007,56(3):1447-1451. 被引量:13
  • 6Steves A L, Schrama de Pauw A D. Vapor-deposited CsI:Na layers, Ⅰ. Morphologic and crystallographic properties[M]. Philips Research Reports, 1974,29 : 340-352.
  • 7Ananenko A, Fedorov A, Lebedinsky A, et al. Structural dependence of CsI(T1) film scintillation properties[J]. Semiconductor Physics, Quantum Electronics and Optoelectronic s , 2004,7(3) : 297-300.
  • 8Nittij M A, Cioffi N, Nappi E, et al. Influence of bias voltage on the stability of CsI photocathodes exposed to air[J]. Nuclear Instruments and Methods in Physics Research A, 2002,493 : 16-24.
  • 9Jing T, Goodman G A, Drewery J, et al. Amorphous silicon pixel layers with cesium iodide converters for medical radiography[J]. IEEE Transactions on Nuclear Science,1994,41(4):903-909.
  • 10Nagarkar V V, Gupta T K, Miller S R, et al. Structured CsI(TI) scintillators for X-ray imaging applications[J]. IEEE Transactions on Nuclear Science, 1998,45(3) :492-496.

共引文献30

同被引文献33

引证文献4

二级引证文献11

;
使用帮助 返回顶部