Co/Cu多层膜沉积过程中结构和形貌的变化

The change of structure and morphology during deposition process in Co/Cu multilayer film

从原子结合能和位错生成能入手,分别计算了在Co基底上沉积Cu薄膜和在Cu基底上沉积Co薄膜时,薄膜结构随沉积厚度增加所发生的变化.结果表明,在{100}纤维织构的Co基底上沉积Cu薄膜,当薄膜厚度达到3.33 nm时会在薄膜与基底界面产生错配位错,且随薄膜厚度增加,错配位错密度逐渐增大.在{100}纤维织构Cu基底上沉积Co薄膜,当薄膜厚度达到4.90 nm时,薄膜生长模式会由层状向岛状转变,薄膜为fcc结构.当厚度超过12.64 nm后会出现hcp结构.计算结果与实验得出的结论基本相符.

We consider in terms of atomic binding energy and dislocation formation energy to calculate the structure and morphology changing progress of films in two cases, including deposite Cu on Co substrate and deposite Co on Cu substrate. The results showed that misfit dislocation will generate at the interface of film and substrate when the thickness of Cu film reached 3.33 nm during deposition Cu film on {100} fiber textured Co substrate and the density of misfit dislocation will increase with the growth of film. When Co film grow on {100} fiber textured Cu substrate, the growth mode will change from layer-by layer to island after film thickness arriving 4.90 nm and it＇s fcc structure. The hcp structure will generate when the thickness of Co film exceeds 12.64 nm. The results is basically consistent with the conclusions of experiment.