柔性单晶锗PIN二极管在关态下的建模研究

Modeling research of flexible single crystal germanium PIN diode under off state

介绍了柔性单晶锗纳米薄膜(GeNM)PIN二极管的制备方法和反向偏置下对应不同弯曲状态下的射频特性。为了定量研究在反向偏置下机械弯曲对柔性PIN二极管射频特性的影响,分别搭建了不同弯曲半径下的等效电路模型。通过研究不同机械应力作用下模型中的各个参数的变化得到二极管内部电阻,寄生电感,p+p-结的电阻以及p-n+结的电容为影响其射频特性的主要因素,机械弯曲使这些参数值单调变化,导致柔性单晶锗PIN二极管关态下的射频特性变好。这在应变测量领域显示出很大的发展应用潜力。

This letter presents the fabrication method of flexible single-crystalline germanium nanomembrane （GeNM ） p-intrinsic-n （PIN ） diodes on plastic substrate and radio frequency （rf ） characterization under off state of various bending strains .In order to quantitatively research the RF characteristic variations with different mechanical stress applied on the flexible PIN diode under reverse mode ,accurate equivalent circuit models were set up under different bending radius .After researching the model parameters of the diode varying with the mechanical stress ,it can be obtained internal resistance ,parasitic inductance ,p＋ p-junction resistor and p-n＋ junction capacitance are the main factors affecting the rf characteristics .Mechanical bending makes these parameters change monotonously ,which results the rf characteristics of flexible single-crystal germanium PIN diode getting better under the off state .It also shows great potential in the strain measurement field .