激光电压探测及成像技术在失效分析中的应用

Application of the Laser Voltage Probing and Imaging Technology in Failure Analysis

针对传统失效定位技术如光辐射显微镜(EMMI)、光束感生电阻变化(OBIRCH)和红外成像等无法追踪时序逻辑电路内部的传输信号、失效位置定位偏差大等问题,介绍了一种激光电压探测及成像的失效分析技术。首先对晶圆扫描分析系统及激光电压探测成像技术进行简要介绍,基于晶圆扫描分析系统应用激光电压探测及成像技术对标准单元中的时序逻辑电路进行失效分析。结果显示激光电压探测成像技术可以有效地对标准单元内部频率信号进行追踪和信号波形测量并成像,结合电路原理分析以及芯片版图可以精确定位失效点,并进一步对失效位置和失效原因进行物性失效分析,最终建立失效模式。

Traditional failure localization techniques such as the photon emission microscope（ EMMI）,optical beam induced resistance change（ OBIRCH） and thermal infrared imaging have difficulty tracking transmission signals in sequential logic circuits and have large failure location deviations. The laser voltage probing and imaging failure analysis techniques were introduced. Firstly,the wafer-scan ana-lysis system and the laser voltage probing and imaging techniques were introduced briefly. Based on the wafer-scan analysis system,the failure analysis of the sequential logic circuit in the standard cell was implemented using laser voltage probing and imaging techniques. The results demonstrate that laser voltage probing and imaging techniques can track the standard cell＇s internal frequency signals effectively,and the signal waveform is measured and imaged. Combined with the circuit principle analysis and the layout of the chip,the failure location can be identified accurately,and the physical failure analysis of the fai-lure location and the failure cause are carried out. Finally the failure model is built.