摘要
综合报道了国内AgGaS_2晶体生长的研究进展。单相高纯的AgGaS_2多晶材料主要采用两温区气相输运温度振荡法和普通输运法合成。垂直Bridgman法是生长完整、大尺寸的AgGaS_2单晶体主要方法。其中又可分为籽晶定向法和三温区坩埚下降法。同时简单介绍了一种新型的合成生长一体化的生长方法。表明国内AgGaS_2晶体的生长工艺基本稳定有效,为进一步的器件制作和应用提供了保障。
Research progress on the growth of AgGaS2 single crystal has been presented. Single-phase and high-purity AgGaS2 polyerystalline materials were synthesized by vapor transporting method with two-zone temperature oscillation, and generic vapor transporting method. AgGaS2 crystals were grown by modified Bridgman technique. A new method for synthesizing and growing in one ampoule was introduced. The growth process of AgGaS2 crystal is stable and effective.
出处
《中国照明电器》
2017年第8期20-23,共4页
China Light & Lighting
关键词
硫镓银
多晶合成
单晶生长
AgGaS2 crystal
polycrystalline synthesis
crystal growth
