摘要
Few-layer Tellurium, an elementary semiconductor, succeeds most of striking physical properties that black phosphorus(BP) offers and could be feasibly synthesized by simple solution-based methods. It is comprised of non-covalently bound parallel Te chains, among which covalent-like feature appears.This feature is, we believe, another demonstration of the previously found covalent-like quasi-bonding(CLQB) where wavefunction hybridization does occur. The strength of this inter-chain CLQB is comparable with that of intra-chain covalent bonding, leading to closed stability of several Te allotropes. It also introduces a tunable bandgap varying from nearly direct 0.31 eV(bulk) to indirect 1.17 eV(2L) and four(two) complex, highly anisotropic and layer-dependent hole(electron) pockets in the first Brillouin zone.It also exhibits an extraordinarily high hole mobility(~10~5 cm^2/Vs) and strong optical absorption along the non-covalently bound direction, nearly isotropic and layer-dependent optical properties, large ideal strength over 20%, better environmental stability than BP and unusual crossover of force constants for interlayer shear and breathing modes. All these results manifest that the few-layer Te is an extraordinary-high-mobility, high optical absorption, intrinsic-anisotropy, low-cost-fabrication, tunable bandgap, better environmental stability and nearly direct bandgap semiconductor. This ‘‘one-dimen sion-like" few-layer Te, together with other geometrically similar layered materials, may promote the emergence of a new family of layered materials.
Few-layer Tellurium, an elementary semiconductor, succeeds most of striking physical properties that black phosphorus （BP） offers and could be feasibly synthesized by simple solution-based methods. It is comprised of non-covalently bound parallel Te chains, among which covalent-like feature appears. This feature is, we believe, another demonstration of the previously found covalent-like quasi-bonding （CLQB） where wavefunction hybridization does occur. The strength of this inter-chain CLQB is compara- ble with that of intra-chain covalent bonding, leading to closed stability of several Te allotropes. It also introduces a tunable bandgap varying from nearly direct 0.31 eV （bulk） to indirect 1.17 eV （2L） and four （two） complex, highly anisotropic and layer-dependent hole （electron） pockets in the first Brillouin zone. It also exhibits an extraordinarily high hole mobility （-10^5 cm^2/Vs） and strong optical absorption along the non-covalently bound direction, nearly isotropic and layer-dependent optical properties, large ideal strength over 20%, better environmental stability than BP and unusual crossover of force constants for interlayer shear and breathing modes. All these results manifest that the few-layer Te is an extraordinary-high-mobility, high optical absorption, intrinsic-anisotropy, low-cost-fabrication, tunable bandgap, better environmental stability and nearly direct bandgap semiconductor. This ＂one-dimen sion-like＂ few-layer Te, together with other geometrically similar layered materials, may promote the emergence of a new family of layered materials.
基金
supported by the National Natural Science Foundation of China(11274380,91433103,11622437,61674171,and 61761166009)
the Fundamental Research Funds for the Central Universities of China and the Research Funds of Renmin University of China(16XNLQ01)
The Hong Kong Polytechnic University(G-SB53)
J.Q. and C.W. were supported by the Outstanding Innovative Talents Cultivation Funded Programs 2016 and 2017 of Renmin University of China,respectively
