Ⅱ-Ⅵ族晶体材料研究概述

Research review of Ⅱ-Ⅵ crystal materials

以Zn、Cd和S、Se、Te组成的二元化合物及多元合金为研究对象,从基本性质、体材料和薄膜材料的生长方法、掺杂、退火等几个方面入手,介绍了Ⅱ-Ⅵ族晶体材料的研究进展。对比了不同生长方法的生长机理差异及其对产品尺寸、纯度、缺陷和性能的影响,对影响产品性能和质量的关键因素如生长参数、生长设备、衬底等方面进行了阐述,为实现Ⅱ-Ⅵ族晶体材料的生长优化提供了参考。

Using binary compounds and multi-component alloys which are composed by Zn,Cd and S,Se,Te as research object,starting from the basic properties,growth methods,doping,annealing and other aspects of bulk materials and film materials,the development of Ⅱ-Ⅵ crystals has been introduced.The differences in growth mechanism of different growth methods and their effects on product size,purity,defects and performance were compared.The key factors affecting product performance and quality such as growth parameters,growth equipment and substrates were described,in order to achieve the growth optimization of Group Ⅱ-Ⅵ crystal materials.