基于半导体开关和脉冲变压器的高压脉冲电路的过电压抑制

Overvoltage Suppression of High Voltage Pulse Circuits Based on Semiconductor Switches and Pulse Transformers

脉冲变压器具有升压比高、可靠性好、体积小、价格低等优点,被广泛用于高压脉冲电路。然而,受到漏感影响,会产生过电压,不仅增大了损耗,还可能导致开关过电压击穿。该文分析了过电压的产生机理,比较了常规过电压抑制措施的效果及其缺陷,提出一种新的过电压抑制电路,给出了新电路的拓扑结构、工作原理和电路参数选择依据,并通过建模仿真验证了新过电压抑制电路的效果。最后,采用这种过电压抑制电路,研制了一台紧凑重频高压脉冲发生器,可以产生幅值11 kV、频率2 kHz、脉宽2μs的脉冲,并用于驱动悬浮电极介质阻挡放电负载,能够稳定产生低温等离子体。

Pulse transformer has the advantages of high step-up ratio, good reliability, small size and low price, and is widely used in high-voltage pulse circuits. However, when a semiconductor switch is used to drive a pulse transformer, an over-voltage may be generated due to the influence of the leakage inductance, which not only increases the loss but also may lead to overvoltage breakdown of the switch. In this paper, the mechanism of overvoltage generation was analyzed, the effects and disadvantages of conventional overvoltage suppression methods were compared, a new overvoltage suppression circuit was proposed, and the topology structure, working principle and circuit parameter selection basis were given. The effects of the new over-voltage suppression circuit were verified through modeling and simulation. Finally, the overvoltage suppression circuit was used to develop a compact heavy-duty high-voltage pulse generator which can generate pulses with 11 kV amplitude, 2 kHz frequency, and 2 μs pulse width, drive a load of floating electrode dielectric barrier discharge and generate stable low temperature plasma.