摘要
在过去的十五年内,低温下金属中电子-电子散射电阻率ρ_(ea)(T)的实验和理论取得了不少进展。由位错等引起的各向异性的电子散射过程在引起电子—电子散射电阻率的样品依赖性方面起了重要作用。
Within the past decade and half, much progress has heen made in the theory and experiments of the electron-electron scattering resistivity in metals at low-temperature. An important role by anisotropic electron scattering presses such as those caused by dislocation etc in turn leads the sample dependence of the electron-electron scattering resistivity.
出处
《重庆师范学院学报(自然科学版)》
1991年第1期78-84,共7页
Journal of Chongqing Normal University(Natural Science Edition)
关键词
金属
低温
电阻率
位错
电子散射
the electron relaxation time, electron-impurity scattering, electron-dislocation scattering, the isotropic limit, the anisotropic limit, the sample dependence