新型VBO接口芯片静电放电防护器件

New electrostatic discharge protection device for VBO high speed chip

为了改进VBO接口电路静电放电(ESD)防护器件性能,提出2种新的ESD防护器件:栅二极管与面积效率二极管触发可控硅整流器(SCR).采用SMIC 40 nm CMOS工艺与SMIC 28 nm PS CMOS工艺制备传统二极管、栅二极管、面积效率SCR;通过半导体工艺及器件模拟工具(TCAD)进行仿真,分析电流密度;通过传输线脉冲测试(TLP)方法,测试不同结构ESD防护器件的Ⅰ-Ⅴ特性.栅二极管的ESD鲁棒性为19.7 mA/μm,导通电阻为1.28Ω,相较于传统二极管降低了38.8%.面积效率二极管触发SCR触发电压为1.82 V,鲁棒性为48.1 mA/μm,相较于传统二极管提升了174.8%.测试结果表明,栅二极管与ASCR和传统ESD器件相比,性能有极大的提升,适合用作VBO接口芯片的ESD防护.

Two new electrostatic discharge(ESD)protection devices,gate diode and area-efficiency diode-trigger silicon controlled rectifier(SCR),were proposed in order to improve the performance of ESD protection devices on VBO interface circuit.Traditional diodes,gated diodes,and area-efficient SCR were fabricated based on SMIC 40 nm CMOS process and SMIC 28 nm PS CMOS process.The total current densities of those three structures were analyzed with the simulation of TCAD software.Ⅰ-Ⅴcharacteristics of those ESD protection devices were measured by transmission line pulse(TLP)testing after tape-out.The gate diode's ESD robustness was 19.7 mA/μm,and on-resistance was 1.28Ωwith a 38.8%reduction compared to conventional diode.The trigger voltage of areaefficiency diode trigger SCR was 1.82V and robustness of it was 48.1mA/μm,which was a 174.8%improvement over conventional diode.The test results show that the performance of the gate diode and the ASCR is greatly improved compared to the conventional ESD device and is suitable to be the ESD device of VBO interface chip.