HEPS在轴注入冲击器系统及快脉冲电源样机研制

Application of fast pulsed power supply to high energy photon source

高能同步辐射光源(HEPS)是我国计划建造的下一代基于储存环的高亮度光源,束流自然发射度已经接近衍射极限。作为典型的低发射度储存环(LER),HEPS的动力学孔径远小于物理孔径,传统的离轴累积注入已经无法满足要求,只能采用基于strip-line kicker的在轴注入方案。为了实现逐束团操控,HEPS要求注入kicker脉冲电源底宽(3%～3%)<10ns,半高宽(50%～50%)>4.5ns,幅度>±17.5kV(50Ω负载),重复频率>50Hz。高能同步辐射光源验证装置(HEPS-TF)工程研制了一台基于DSRD的双极性快脉冲电源性能样机,在50Ω负载上可以获得上升时间(10%～90%)<2.6ns,下降时间(90%～10%)<3.2ns,半高宽(50%～50%)>5ns,底宽(3%～3%)<10ns,幅度>±18kV的脉冲高压,可以满足HEPS注入基准方案——在轴置换注入的要求。

High Energy Photon Source (HEPS) is the next generation of high-brightness photon source based on storage ring planned in China. Its natural emittance of the beam is close to the diffraction limit. As a typical low emittance storage ring (LER), the dynamic aperture of HEPS is far smaller than the physical aperture. Hence the traditional off-axis cumulative injection can not meet the requirements, and only strip-line kicker based on in-line injection scheme can be used. In order to realize bunch-by-bunch control, HEPS requires injecting kicker electrical pulse with a bottom width (3%-3%) of less than 10 ns, a half width (50%-50%) of more than 4.5 ns, an amplitude of >+17.5 kV (50 Ω load) and a repetition frequency of more than 50 Hz. A prototype of bipolar fast pulsed power supply based on DSRD has been developed on the project of HEPS-TF. The performance of the prototype can produce a pulse at 50 Ω load with rise time (10%-90%)<2.6 ns, fall time (90%-10%)< 3.2 ns, FWHM (50%-50%)> 5 ns, bottom width (3%-3%)< 10 ns, amplitude >18 kV. It can meet the requirement of on-axis swap-out injection which is the baseline injection scheme of HEPS.