摘要
Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al_2O_3 layer was deposited on the sidewall of NR-μLEDs,which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.
Full-color displays based on micro light-emitting diodes(μLEDs) can be fabricated on monolithic epitaxial wafers. Nanoring(NR) structures were fabricated on a green LED epitaxial wafer; the color of NR-μLEDs was tuned from green to blue through strain relaxation. An Al_2O_3 layer was deposited on the sidewall of NR-μLEDs,which improved the photoluminescence intensity by 143.7%. Coupling with the exposed multiple quantum wells through nonradiative resonant energy transfer, red quantum dots were printed to NR-μLEDs for a full-color display. To further improve the color purity of the red light, a distributed Bragg reflector is developed to reuse the excitation light.
基金
Ministry of Science and Technology,Taiwan,China(MOST)(107-2221-E-009-113-MY3,105-2221-E-009-112-MY3)
Strait Postdoctoral Foundation of Fujian Province of China
