摘要
外延生长异质薄膜通常要求材料之间晶格匹配 ,然而利用范德瓦尔斯作用外延生长时 ,晶格匹配要求显著降低。实验上已经得出了在MoS2 基板上外延生长C60 薄膜的结果 ,本文用分子动力学计算机模拟方法对MoS2 基板上外延生长C60 薄膜进行了研究 ,证实范德瓦尔斯外延可以克服较大的晶格失配问题。
Lattice mismatching between different materials significantly forbids epitaxial growth of hetero structured films.However,if van der Waals force is mainly responsible for the epitaxial growth,lattice matching requirements can be considerably relaxed.Molecular dynamics simulation of the epitaxial growth of C 60 on MoS 2 substrate,which was already reported as an experimental success for a large lattice mismatching system,was performed.The simulated results show that van der Waals force makes it possible to epitaxially grow hetergenous films in the case of some highly lattice mismatching systems.
出处
《真空科学与技术》
CSCD
北大核心
2002年第5期360-365,共6页
Vacuum Science and Technology
基金
上海市科学技术委员会
上海市应用物理中心资助项目 (No .OOJC14 0 8
No .0 114nm0 69)
