具有电子阻挡层的2μm InGaAsSb/AlGaAsSb量子阱激光器

2 μm InGaAsSb /AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

为了降低2μm InGaAsSb/AlGaAsSb量子阱激光器的阈值电流并获得良好的温度特性,在p型波导层及限制层之间引入AlGaAsSb电子阻挡层。采用理论计算方法模拟了电子阻挡层对InGaAsSb/AlGaAsSb LD输出特性的影响。研究结果表明:电子阻挡层结构可有效减少2μm InGaAsSb/AlGaAsSb量子阱激光器的Auger复合,抑制量子阱中导带电子向p型限制层的溢出,降低器件的阈值电流,同时改善了温度敏感特性。

In order to reduce the threshold current and obtain the good temperature characteristics of2 μm InGaAsSb /AlGaAsSb diode laser,AlGaAsSb electronic stopper layer( ESL) was introduced between p-waveguide and p-cladding layer. The research was conducted by LASTIP. The simulated results reveal that ESL can reduce the threshold current and improve the temperature characteristics of LD effectively. All the advantages are due to the lower Auger recombination rate in the quantum wells and smaller electron concentrations in the p-side,which are caused by the higher band offset between ESL and p-waveguide.