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A brief review of formation energies calculation of surfaces and edges in semiconductors 被引量：1

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摘要 To have a high quality experimental growth of crystals, understanding the equilibrium crystal shape(ECS) in different thermodynamic growth conditions is important. The factor governing the ECS is usually the absolute surface formation energies for surfaces(or edges in 2D) in different orientations. Therefore, it is necessary to obtain an accurate value of these energies in order to give a good explanation for the observation in growth experiment. Historically, there have been different approaches proposed to solve this problem. This paper is going to review these representative literatures and discuss the pitfalls and advantages of different methods.
作者 Chuen-Keung Sin Jingzhao Zhang Kinfai Tse Junyi Zhu
机构地区 The Chinese University of Hong Kong
出处 《Journal of Semiconductors》 EI CAS CSCD 2020年第6期3-18,共16页 半导体学报（英文版）
基金 The research is supported by HKRGC,GRF with the Project Codes of 14307219,14307018,14301318,and 14319416 by direct grant from CUHK.
关键词 surface first principle MORPHOLOGY
分类号 TB306 [一般工业技术—材料科学与工程] TN304 [电子电信—物理电子学]
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  • 1Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science2004, 306, 666-669.
  • 2Huang, X.; Qi, X. Y.; Boey, F.; Zhang, H. Graphene-based composites. Chem. Soc. Rev. 2012, 41, 666-686.
  • 3Huang, X.; Yin, Z. Y.; Wu, S. X.; Qi, X. Y.; He, Q. Y.; Zhang, Q.; Yan, Q.; Boey, F.; Zhang, H. Graphene-based materials: Synthesis, characterization, properties, and applications. Small2011, 7, 1876-1902.
  • 4Gao, T.; Song, X. J.; Du, H. W.; Nie, Y. F.; Chen, Y. B.; Ji, Q. Q.; Sun, J. Y.; Yang, Y. L.; Zhang, Y. F.; Liu, Z. F. Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures. Nat. Commun. 2015, 6. 6835.
  • 5Hunt, B.; Sanchez Yamagishi, J. D.; Young, A. F.; Yankowitz, M.; LeRoy, B. J.; Watanabe, K.; Taniguchi, T.; Moon, P.; Koshino, M.; Jarillo-Herrero, P. et al. Massive Dirac Fermionsand Hofstadter Butterfly in a van der Waals heterostructure. Science 2013, 340, 1427-1430.
  • 6Yang, W.; Chen, G. R.; Shi, Z. W.; Liu, C. C.; Zhang, L. C.; Xie, G. B.; Cheng, M.; Wang, D. M.; Yang, R.; Shi, D. X. et al. Epitaxial growth of single-domain graphene on hexagonal boron nitride. Nat. Mater. 2013, 12, 792-797.
  • 7Levendorf, M. P.; Kim, C. J.; Brown, L.; Huang, P. Y.; Havener, R. W.; Muller, D. A.; Park, J. Graphene and boron nitride lateral heterostructures for atomically thin circuitry. Nature 2012, 488, 627-632.
  • 8Liu, Z.; Ma, L. L.; Shi, G.; Zhou, W.; Gong, Y. J.; Lei, S. D.; Yang, X. B.; Zhang, J. N.; Yu, J. J.; Hackenberg, K. P. et al. In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes. Nat. Nanotech. 2013,8, 119-124.
  • 9Wang, M.; Jang, S. K.; Jang, W. J.; Kim, M.; Park, S. Y.; Kim, S. W.; Kahng, S. J.; Choi, J. Y.; Ruoff, R. S.; Song, Y. J. et al. A platform for large-scale graphene electronics -CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride. Adv. Mater. 2013, 25, 2746-2752.
  • 10Zhang, C. H.; Zhao, S. L.; Jin, C. H.; Koh, A. L.; Zhou, Y.; Xu, W. G.; Li, Q. C.; Xiong, Q. H.; Peng, H. L.; Liu, Z. F. Direct growth of large-area graphene and boron nitride heterostructures by a co-segregation method. Nat. Commun.2015, 6, 6519.

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Journal of Semiconductors
2020年 第6期

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