TSV阵列的串扰耦合与布局结构分析

Crosstalk coupling and layout analysis of TSV array

针对高密度TSV阵列中相邻TSV受耦合电容影响产生耦合噪声,使信号传输可靠性下降,基于TSV阵列,分析了TSV数量和位置变化对串扰耦合的影响。以3×3 TSV阵列为研究对象,提出了4种布局结构并进行仿真分析。实验结果表明:TSV阵列中的耦合电容不会随着数量的增加而线性增加,边缘相邻TSV间的耦合电容比中间相邻TSV间的耦合电容大40%;根据串扰耦合得到2种利于TSV阵列扩展的结构模型,其具有较好的传输性能。

In high density TSV array, the adjacent TSV is affected by coupling capacitance to produce coupling noise, which reduces the reliability of signal transmission. Based on the TSV array, the influence of the number and location of TSV on crosstalk coupling is analyzed. Then, taking 3×3 TSV array as the research object, four layout structures are proposed and simulated. The experimental results show that the coupling capacitance of the TSV array will not increase linearly with the increase of the number. The coupling capacitance between adjacent TSVs at the edge is about 40% larger than that between adjacent TSVs in the middle. According to crosstalk coupling, two structural models are obtained, which are favorable for TSV array expansion and have better transmission performance.