Solid Phase Reactions of Ni-GaAs Alloys for High Mobility Ⅲ-Ⅴ MOSFET Applications

The solid phase reactions of Ni with GaAs substrates are investigated.The experimental results reveal that the Ni-GaAs solid phase reaction forms a ternary phase of Ni2GaAs when annealing temperatures are in the range 250 300℃.As the annealing temperature increases to 400℃,the Ni2GaAs phase starts to decompose due to NiAs phase precipitation.Ni-GaAs alloys processed at 400℃ with a 3min annealing time demonstrate a sheet resistance of 30Ω/square after unreacted Ni removal in hot diluted-HCl solutions.Therefore,Ni-GaAs alloys formed by solid phase reaction could be promising metallic source/drain structures with significant low series resistance for high mobility Ⅲ-Ⅴ metal-oxide-semiconductor field effect transistor (MOSFET) applications.