摘要
Optoelectronic properties of MoSe2 are modulated by controlled annealing in air.Characterizations by Raman spectroscopy and XPS demonstrate the introduction of oxygen defects.Considerable increase in electron and hole mobilities reveals the highly improved electron and hole transport.Furthermore,the photocurrent is enhanced by nearly four orders of magnitudes under 7 nW laser exposure after annealing.The remarkable enhancement in the photoresponse is attributed to an increase in hole trapping centers and a reduction in resistance.Furthermore,the annealed photodetector shows a fast time response on the order of 10 ms and responsivity of 3×10^(4) A/W.
作者
Jintao Hong
Fengyuan Zhang
Zheng Liu
Jie Jiang
Zhangting Wu
Peng Zheng
Hui Zheng
Liang Zheng
Dexuan Huo
Zhenhua Ni
Yang Zhang
洪锦涛;张丰源;刘峥;蒋杰;吴章婷;郑鹏;郑辉;郑梁;霍德璇;倪振华;张阳(Laboratory for Nanoelectronics and NanoDevices,Department of Electronics Science and Technology,Hangzhou Dianzi University,Hangzhou 310018,China;Jiangsu Province Special Equipment Safety Supervision and Inspection Institute,Wuxi 214170,China;School of Physics,Southeast University,Nanjing 211189,China;Institute of Materials Physics,Hangzhou Dianzi University,Hangzhou 310018,China)
基金
Project supported by the National Natural Science Foundation of China(Grant No.61904043)
the Natural Science Foundation of Zhejiang Province,China(Grant No.LQ19A040009).
