基于SPH方法的碳化硅材料单颗磨粒磨削仿真

Simulation of Single Abrasive Grinding of Silicon Carbide Material Based on SPH Method

为了探究不同磨削参数对碳化硅材料去除机理的影响规律,进而指导碳化硅材料的实际磨削加工。采用光滑粒子流体动力学(SPH)方法,将金刚石磨粒简化为正十二面体,对碳化硅材料在不同磨削速度及磨削深度下进行了三维仿真,通过单一变量法对材料去除率和磨削力进行了分析。结果表明较高的磨削速度和低的磨削深度可以降低残余应力,提高零件的表面质量,在磨削速度小于40 m/s时,磨削深度对材料去除率的影响甚微,在磨削速度较大时,磨削深度的提升能有效提高材料去除率;而在磨削深度小于0.2μm时,磨削速度对磨削力无明显影响;在较大的磨削深度时,磨削力随着磨削速度的增大而显著提升。

In order to explore the influence of different grinding parameters on the removal mechanism of silicon carbide material and then guide the actual grinding of silicon carbide material.Using the smoothed particle hydrodynamics(SPH)method,this research simplified the diamond abrasive grain into regular dodecahedron and conducted a three-dimensional simulation of silicon carbide material at different grinding speed and grinding depth.The material removal rate and grinding force were analyzed through the single variable method.Results illustrate that higher grinding speed and lower grinding depth can reduce residual stress and improve the surface quality of parts.When the grinding speed is less than 40 m/s,the grinding depth has little effect on the material removal rate.The increase of the cutting depth can effectively increase the material removal rate.When the grinding depth is less than 0.2μm,the grinding speed has no obvious effect on the grinding force.And with a large grinding depth,the grinding force will greatly increase with the increase of grinding speed.