GaAs集成电路的金属化缺陷失效定位研究

Study on Metal Defect Failure Localization of GaAs IC

介绍了一种针对砷化镓集成电路(GaAs IC)金属化缺陷的失效定位方法。首先分析了GaAs IC不同金属化结构(如金属化互连、MIM结构、肖特基接触电极)的光发射显微及光致电阻变化(EMMI/OBIRCH)效应,再结合典型的电路原理,得到可能的电路缺陷模型与EMMI/OBIRCH结果之间的对应关系,从而快速、准确地由EMMI/OBIRCH图像得到金属化开路或者短路失效位置。案例研究结果表明,该方法可用于GaAs IC的失效定位,例如放大器、高速数字驱动电路、射频开关等,适用的失效模式包括基极金属化台阶断裂、源极金属通孔开裂形成的开路或MIM金属化桥连形成的低阻等。

A failure localization method of metal defect of GaAs based integrated circuit(GaAs IC)was presented.First,EMMI/OBIRCH effects of different structures(such as metal interconnection,MIM structure and Schottky contact electrode)of GaAs IC were analyzed.Combined with typical circuit schematic,the coincidence relations between possible circuit defect models and EMMI/OBIRCH results were obtained,thus the open or short location of metallization could be quickly and precisely localized from EMMI/OBIRCH images.Case study results show the method is suitable for GaAs IC failure localization,such as amplifier,high speed digital drive circuit,RF switch,etc.,and also available for failure modes including base metal fracture or open circuit induced by source metal via's crack,low resistance formed by bridging of MIM metallization.