有机硅废触体中铜的浸出行为及动力学研究

Leaching Behavior of Copper from Spent Silicon Contact Mass and Its Kinetics

采用过氧化氢氧化⁃硫酸浸出工艺提取有机硅废触体中的铜,考察了硫酸浓度、固液比、浸出温度、浸出时间和过氧化氢用量等因素对铜浸出率的影响,并进行了浸出动力学研究。结果表明,在浸出温度40℃、浸出时间2 h、硫酸浓度1.5 mol/L、液固比4 mL/g、过氧化氢溶液体积与固体质量之比为0.2 mL/g的浸出条件下,铜平均浸出率为96.64%,浸出渣中平均含铜仅0.524%。有机硅中铜的浸出过程符合收缩未反应核模型,主要受化学反应控制,铜浸出过程的反应表观活化能为24.23 kJ/mol。

Copper was extracted from spent silicon contact mass by adopting a processing technique consisting of hydrogen peroxide oxidation and sulfuric acid leaching.The leaching kinetics and the effects of sulfuric acid concentration,solid⁃liquid ratio,leaching temperature,leaching time and dosage of hydrogen peroxide on copper leaching rate were all investigated.The results show that after a 2 h⁃leaching at 40℃with sulfuric acid at a concentration of 1.5 mol/L,liquid and solid at a ratio of 4 mL/g,volume of hydrogen peroxide and the solid mass at a ratio of 0.2 mL/g,the leaching rate of copper can reach 96.64%on average and an average copper content in the leach residue is only 0.524%.It is found that the leaching of copper from the spent silicon contact mass can be described as a shrinking unreacted core model,mainly controlled by chemical reaction,with the apparent activation energy of 24.23 kJ/mol.