摘要
In this work,a novel one-time-programmable memory unit based on a Schottky-type p-GaN diode is proposed.During the programming process,the junction switches from a high-resistance state to a low-resistance state through Schottky junction breakdown,and the state is permanently preserved.The memory unit features a current ratio of more than 10^(3),a read voltage window of 6 V,a programming time of less than 10^(−4)s,a stability of more than 108 read cycles,and a lifetime of far more than 10 years.Besides,the fabrication of the device is fully compatible with commercial Si-based GaN process platforms,which is of great significance for the realization of low-cost read-only memory in all-GaN integration.
基金
supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400
in part by the Youth Innovation Promotion Association of Chinese Academy Sciences (CAS)
in part by the CAS-Croucher Funding Scheme under Grant CAS22801
in part by National Natural Science Foundation of China under Grant 62334012, Grant 62074161, Grant 62004213, Grant U20A20208, and Grant 62304252
in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018
in part by the University of CAS
in part by the IMECAS-HKUST-Joint Laboratory of Microelectronics
