先进制程芯片失效定位技术现状及发展

Current Status and Development of Advanced Process Chip Failure Localization Technology

芯片工艺节点从2011年的28/22 nm、2015年的16/14 nm正向3/2 nm演进,晶体管的结构也由平面金属氧化物半导体场效应晶体管(MOSFET)转向立体的鳍式场效应晶体管(FinFET)。失效定位是芯片失效分析中承上启下的关键一步,随着芯片工艺制程的减小、晶体管结构的转变,传统失效定位技术在定位精度上已不能满足需求。为适应市场变化,先进制程芯片的失效定位技术也有了对应的发展和突破。重点介绍了先进制程芯片中常见的电子、光学失效定位技术,通过原理、案例明确各种技术的优缺点及优先适用的失效模式,并对未来的定位技术发展进行了展望。

The chip process node is evolving from 28/22 nm in 2011 and 16/14 nm in 2015 to 3/2 nm,and the transistor structure is also changing from planar metal-oxide-semiconductor field-effect transistor(MOSFET)to three-dimensional fin-type field-effect transistor(FinFET).Failure localization is a key step in chip failure analysis,and the traditional failure localization technology can no longer meet the demand in terms of localization accuracy with the reduction of chip process and the transformation of transistor structure.In order to meet the market change,the failure localization technology of advanced process chips has also made corresponding development and breakthrough.Common electronic and optical failure localization technologies for advanced process chips are highlighted,the advantages and disadvantages of various technologies and the preferred failure modes are clarified through principles and cases,and the future development of localization technology is envisioned.