摘要
本文给出了用低压直流等离子体法高速率化学气相合成金刚石薄膜的实验结果。其生长速率高达80μm/h左右,它是常规CVD法的80倍。利用X-射线衍射、扫描电子显微镜和Raman谱仪等对金刚石薄膜进行了分析,并对其结果给予简要地讨论。
Diamond thin films have been deposited by DC plasma chemical vapour deposition (CVD) with a high growth rate (≈80μm/h) at low pressure (≈2.66×10~4 Pa) which is about 80 times faster than that in the conventional chemical vapour deposition technique. Crystalline structure of the diamond film was examined by means of X-ray diffraction, scanning electron microscopy and Raman spectrometry. The experimental results are also discussed briefly in the paper.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
1992年第2期143-146,共4页
Journal of The Chinese Ceramic Society
基金
甘肃省科委和国家自然科学基金
关键词
金刚石
薄膜
合成
diamond thin films
DC plasma CVD
growth rate