摘要
计算了GaAs/Al_xGa_(1-x)As和In_(1-x)Ga_xAs/GaSb_(1-y)As_y量子阱中激子的结合能,得到了结合能随阱宽和阱深的变化。结果表明,在这两类量子阱结构中激子结合能的变化规律有本质的不同。
We calculated the binding energies of excitons in GaAs/A1_xGa_(1-x)As and In_(1-x)Ga_xAs/GaSb_(1-y)As_y quantum wells using a varitional method. The variations of binding energies with the well width and well depth was obtained. They present qualitative differences for these two kinds of quantum well structures.
出处
《吉林大学自然科学学报》
CSCD
1989年第1期65-71,共7页
Acta Scientiarum Naturalium Universitatis Jilinensis
关键词
超晶格
量子阱
激子
结合能
superlattlce, quantum well, exciton, binding energy.