摘要
本文利用脉冲直流反应磁控溅射的方法制备了五氧化二钽 (Ta2 O5)薄膜 ,俄歇电子能谱仪测试了薄膜的成分含量 ,椭偏仪测试了Ta2 O5薄膜的厚度和折射率 ,XRD分析了薄膜的晶体结构 ,并且分别研究了氧气含量、基底温度等成膜工艺对薄膜的影响。研究结果表明薄膜的成分主要是由氧气含量决定的。利用金属 绝缘体 (介质膜 ) 金属 (MIM)结构初步对Ta2 O5薄膜进行了电学性能的测试 :皮安电流电压源测试了薄膜的I U特性 ,制备出的薄膜折射率在 2 1～ 2 2 ,MIM的I
Electrical properties and microstructures of tantalum pentoxide films,grown on glass substrates by pulsed DC reactive magnetron sputtering,were studied with Auger electron spectroscopy (AES),scanning electron microscopy (SEM) X ray diffraction (XRD) and ellipsometry to evaluate influence of various parameters on the film growth.The results show that oxygen partial pressure strongly affects the stoichiometry of the film.The current voltage characteristics of the Ta/Ta 2O 5/Ta junctions show good symmetry and low leakage current density.
出处
《真空科学与技术》
CSCD
北大核心
2003年第1期61-63,67,共4页
Vacuum Science and Technology
