化学束—气源外延生长HgCdTe

CHEMICAL BEAM/GAS SOURCE EPITAXIAL GROWTH OF HgCdTe

评论了Ⅱ-Ⅵ族半导体HgCdTe的化学束-气源外延生长系统的设计和研制,介绍了生长HgCdTe外延层和气体源掺碘CdTe外延层的最新结果,这些结果表明了用这种技术生长用于制备先进红外探测器的优质材料的可能性.

A review is given of the design and development of a chemical beam/gas source epitaxial system for HgCdTe Ⅱ-Ⅵ semiconductors. Recent results on the growth of HgCdTe and gas source iodine doped CdTe epitaxial layers are presented. These results show the potential of this growth technique for the growth of high quality materials for advanced IR detector structures.