氧化铝陶瓷集成电路基板材料的制备及性能研究

Study on the Preparation and Performance of Alumina Ceramics Used as Substrate Materials of Integrated Circuit

以微米Al2O3、纳米Ca Zr O3、微米Si O2以及B2O3为主要原料,采用普通烧结工艺制备了氧化铝陶瓷集成电路基板材料。测试和分析了烧结样品的相对密度、介电常数、介电损耗性能以及显微结构。结果表明:当微米Al2O3添加量质量分数为60%,Ca Zr O3为10%、Si O2为12%、B2O3为10%、Na2O为5%以及K2O为3%,同时在1100℃进行烧结时,所制备的陶瓷集成电路基板材料性能最佳,相对密度值为98.7%,介电常数εr为7.68,介质损耗tanδ为1.6×10-3,显微结构均匀,满足集成电路基板材料的要求。

Alumina ceramic used as integrated circuit substrate materials were fabricated with common sintering technique by using micro Al2O3, nano Ca Zr O3, micro Si O2 and B2O3 as main materials. The properties of relative density, dielectric constant, dielectric loss and microstructure were tested and analyzed. Results show that when the contents of micro Al2O3 is 60%, nano Ca Zr O3 is 10%, micro Si O2 is 12%, B2O3 is 10%, Na2 O is 5% and K2 O is 3%, and sintered at 1100 ℃, the prepared alumina ceramic can achieve the best properties. The relative density, dielectric constant, dielectric loss of the alumina ceramic is 98.7%,εr is 7.68 and tanδ is 1.6×10-3 respectively. Moreover, the microstructure exhibit uniformly which can satisfy the requirement of the integration of circuit substrate materials.