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Room-temperature continuous-wave electrically injected Ⅲ-Nitride laser diode grown on Si

Room-temperature continuous-wave electrically injected Ⅲ-Nitride laser diode grown on Si
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摘要 Subject Code:F04With the support by the National Natural Science Foundation of China and Chinese Academy of Sciences(CAS),the research team led by Prof.Yang Hui(杨辉)and Prof.Sun Qian(孙钱)at the Key Laboratory of Nano-devices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO),CAS achieved the first InGaN-based laser diode directly grown on Si,operating under
作者 LIU FangMing
出处 《Science Foundation in China》 CAS 2017年第1期30-,共1页 中国科学基金(英文版)
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