金刚石膜介电性能影响因素的研究

Effects of nitrogen addition on dielectric properties of DC arc plasma jet CVD diamond films

为研究沉积的金刚石膜介电性能的影响规律 ,用光谱学方法研究了大面积自支撑金刚石厚膜的介电性能以及加入不同含量的氮气对化学气相沉积(CVD)金刚石膜的介电性能的影响。研究结果表明 ,随着甲烷浓度 (100～200sccm)的增加 ,CVD金刚石膜的生长速率和非金刚石碳的相对含量增加,从而导致膜的介质损耗 (tanδ)增加 ,造成CVD金刚石膜质量下降。随着沉积温度(1010～1030K)的提高 ,CVD金刚石膜的介电损耗减小。氮气加入量的增加 ,CVD金刚石膜的介质损耗增加。

The dielectric properties of CVD diamond films were studied over a wide frequency at different growth parameters.The effects of different amounts nitrogen on dielectric property were also investigated.Results indicate that dielectric loss(tanδ)of CVD diamond film increase with the increase of CH 4 con-centration(100～200sccm),due to the increase of growth rate of CVD diamond and content of non-diamond carbon.Results also show that dielectric loss(tanδ)of CVD diamond film decreases with the increase of deposition temperature(1010K～1030K),and dielectric loss increases with the increase of nitrogen addition.