p沟道锗/硅异质纳米结构MOSFET存储器及其逻辑阵列

p-Channel Ge/Si Hetero-Nanocrystal Based MOSFET Memoryand Its Logic Array

采用巴丁 (Bardeen)传输哈密顿方法 ,数值计算了 p沟道锗 /硅异质纳米结构存储器的时间特性 .由于台阶状隧穿势垒和较高价带带边的作用 ,这种新型的存储器单元可以同时实现器件的快速编程和长久存储 ,具有优异的存储特性 .以 2× 2逻辑阵列为例说明了这类存储器单元组成逻辑电路的设计原理 .研究结果表明 :这种器件可以作为在室温下工作的性能优异的非易失性存储器单元 ,有望在将来的超大规模集成电路中获得应用 .

Basing on Bardeen's transfer Hamiltonian formalism,the charge storage characteristics of p-channel Ge/Si hetero-nanocrystal based MOSFET memory is simulated.Owing to the advantages of a compound potential well and a higher offset in the valence band,this kind of memory can possess the advantages of both high-speed programming and long retention simultaneously,and thus it has the well storage characteristics.Furthermore,a 2×2 logical array is used to illustrate the principle of logical.Therefore,this kind of device,as an excellent nonvolatile memory operating at room temperature,is desired for the applications in the future VLSI.