摘要
采用紧束缚的重整化方法研究了(Al_xGa_(1-x)As)_m/(GaAs)_m(001)超晶格的电子能带结构与合金组分x及层厚间的变化关系。给出了临界组分x_o与层厚m间的变化关系图。并以二次函数形式给出了直接能隙和间接能隙与合金组分x间的变化关系。最后,也用Kronig—Penney模型对超晶格的电子能带结构进行了计算,并与紧束缚的计算结果进行了比较。
The dependence of the electronic band structures of superlattices (ALrGa1-xAs)m/GaAs)m (001)on the alloy composition x and layer number m has been calculated by using the renormalized method in tight-binding frame. A figure showing the relation between the critical alloy composition xc and the layer number m is given. The direct and indirect energy gaps as a function of the alloy composition x are given in analytic form with the square polynomials. At last the electronic band structures of the superlattices were also calculated with the Kronig-Penney model. The results were compared with that calculated by tight-binding method.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1992年第1期8-12,共5页
Research & Progress of SSE
基金
国家自然科学基金资助项目
关键词
半导体
超晶格
能带结构
合金组分
Superlattice, Renormalized Method, Direct Energy Gap, Indirect Energy Gap, Kronig-Pen- ney Model