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(Al_xGa_(1-x)As)_m/(GaAs)_m(001)超晶格的能带结构与合金组分x间的关系 被引量:1

The Dependence of the Electronic Band Structures of Superlattices (Al_xGa_(1-x)As)_m/(GaAs)_m(001) on the Alloy Composition x
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摘要 采用紧束缚的重整化方法研究了(Al_xGa_(1-x)As)_m/(GaAs)_m(001)超晶格的电子能带结构与合金组分x及层厚间的变化关系。给出了临界组分x_o与层厚m间的变化关系图。并以二次函数形式给出了直接能隙和间接能隙与合金组分x间的变化关系。最后,也用Kronig—Penney模型对超晶格的电子能带结构进行了计算,并与紧束缚的计算结果进行了比较。 The dependence of the electronic band structures of superlattices (ALrGa1-xAs)m/GaAs)m (001)on the alloy composition x and layer number m has been calculated by using the renormalized method in tight-binding frame. A figure showing the relation between the critical alloy composition xc and the layer number m is given. The direct and indirect energy gaps as a function of the alloy composition x are given in analytic form with the square polynomials. At last the electronic band structures of the superlattices were also calculated with the Kronig-Penney model. The results were compared with that calculated by tight-binding method.
作者 徐至中
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 1992年第1期8-12,共5页 Research & Progress of SSE
基金 国家自然科学基金资助项目
关键词 半导体 超晶格 能带结构 合金组分 Superlattice, Renormalized Method, Direct Energy Gap, Indirect Energy Gap, Kronig-Pen- ney Model
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