摘要
介绍了一种制备非致冷红外探测器阵列的新方法,此方法避免了使用传统的微电子机械系统(MEMS)工艺来加工微桥.研究了如何在Si基片表面形成ZnO膜层网格状结构的方法.ZnO纳米粉末和PLZT厚膜采用改进的溶胶-凝胶法制备.表征了ZnO纳米粉末的表面形貌和PLZT厚膜的相组成,测量了PLZT-8/53/47厚膜的铁电性和热释电性.结果表明,ZnO纳米粉末的粒径为40-70 nm,PLZT-8/53/47厚膜为纯钙钛矿相,其主结晶方向与底电极一致.PLZT-8/53/47厚膜具有优良的热释电性能,其热释电系数p为8.21×10-8C/(cm2·℃),而矫顽场较小,25℃时+Ec为32.0 kV/cm,40℃时+Ec仅为27.8 kV/cm.
A process for fabricating uncooled infrared detector array was introduced, instead of traditional technique used in the field of microelectromechanical systems (MEMS) in order to make self-support microbridge structures. The gridding method of ZnO layers prepared on Si substrate was developed. Both ZnO nanometer powders and lead lanthanum zirconate titanate (PLZT) thick films were prepared by improved sol-gel process. ZnO nanometer powders were characterized by TEM and PLZT thick films were analyzed by XRD. The ferroelectric and pyroelectric properties of PLZT-8/53/47 thick films were measured and studied. The results showed that grain size of ZnO nanometer powders ranged from 40 to 70 nm, and pure perovskite PLZT-8/53/47 was found and crystallization of PLZT-8/53/47 thick films was same as bottom electrode in direction. The thick film has high pyroelectric coefficient and low coercive field. The pyroelectric coefficient p is 8.21×10-8 C/(cm2·°C), and the coercive field +Ec is 32.0 kV/cm and 27.8 kV/cm at 25°C and 40°C respectively.
出处
《材料研究学报》
EI
CAS
CSCD
北大核心
2004年第3期308-314,共7页
Chinese Journal of Materials Research
基金
国家自然科学基金90201028
国家八六三计划新材料领域2002AA325080资助项目
