摘要
通过全离子注入双极硅微波晶体管研究中出现的E-B结特性软、低击穿和β变小等现象,从理论上给以浅析,同时,指出了设计和工艺上改进的措施。
The breakdown characteristics of emitter-base junctions and the β-degradation in fully ion-implanted Si bipolar microwave transistors are described. A brief analysis is given theoretically. The improvements on device design and fabrication process are also presented.
出处
《半导体情报》
1993年第3期45-47,共3页
Semiconductor Information
关键词
离子注入
微波晶体管
硅
Ion Implantation, Microwave Transistor, Si
