期刊文献+

非晶硅太阳电池光照J—V曲线反常拐弯现象的研究

On Anomalous Illuminated J-V Characteristics of a-Si:H Solar Cells
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摘要 本文研究了非晶硅(a-Si:H)pin型太阳电池光照J-V特性的反常拐弯现象,发现这种拐弯可以区分为两种类型,它们分别与出现在p界面或n界面上的空穴势垒相联系。并且,以多步隧道复合模型为基础,进行了模拟计算,得到了与实验数据相符合的结果。 This paper reports investigation on 'S-like' bendings of the J-V characteristics of a-Si: H solar cells with configuration of glass/SnO_2/p a-SiCx:Hin/Ag. It is found that the bendings of the J-V curves can be classified into two kinds, based on the fact that the bending occours in the vicinity of V__(oc)or in the region of V>V_(oc),and can be explained in terms of an extra hole barrier existing at the p-or n-interfaces,respectively, induced by contamination or interfacial mismatch.A simulating calculation has been carried out based on a model of multi steps tunneling recombination, and the results obtained are in good agreement with the experimental curves.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1993年第6期337-344,共8页 半导体学报(英文版)
关键词 非晶硅 太阳能电池 拐变现象 光照 Amorphous materials Solar cells
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