摘要
本文研究了非晶硅(a-Si:H)pin型太阳电池光照J-V特性的反常拐弯现象,发现这种拐弯可以区分为两种类型,它们分别与出现在p界面或n界面上的空穴势垒相联系。并且,以多步隧道复合模型为基础,进行了模拟计算,得到了与实验数据相符合的结果。
This paper reports investigation on 'S-like' bendings of the J-V characteristics of a-Si:
H solar cells with configuration of glass/SnO_2/p a-SiCx:Hin/Ag. It is found that the bendings
of the J-V curves can be classified into two kinds, based on the fact that the bending occours
in the vicinity of V__(oc)or in the region of V>V_(oc),and can be explained in terms of an extra
hole barrier existing at the p-or n-interfaces,respectively, induced by contamination or interfacial
mismatch.A simulating calculation has been carried out based on a model of multi
steps tunneling recombination, and the results obtained are in good agreement with the experimental
curves.