摘要
结合数学回归分析与物理应力实验的方法,研究了集成电路抗辐射性能无损筛选技术。通过一定的外界能量注入及总剂量辐照实验,探究电路典型参数的应变情况与电路耐辐射性能的关系,并确定其辐射敏感参数;建立预测集成电路抗辐射性能的多元线性回归方程,并对应力条件下的回归方程进行辐照实验验证。结果显示,数学回归分析与物理应力实验结合的方法提高了无损筛选的可靠性。
Combining the mathematical regression analysis with the physical stressing experiment,the non-destructive screening method for radiation hardened performance of integrated circuit was investigated.The relationship between the change of typical parameters and the radiation performance of the circuit was discussed.The sensitive parameters to irradiation were confirmed.The pluralistic linear regression equation for the prediction of the radiation performance was established.Finally,the regression equations under stress conditions were verified by practical irradiation.The results show that the reliability of the non-destructive screening method can be improved by combining the mathematical regression analysis with the practical stressing experiment.
出处
《原子能科学技术》
EI
CAS
CSCD
北大核心
2012年第11期1388-1392,共5页
Atomic Energy Science and Technology
关键词
无损筛选
辐射损伤
回归分析
物理应力
non-destructive screening
radiation damage
regression analysis
physical stress
