摘要
The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as dielectric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layer were prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10-6 cm2/(V·s), and the on/off current ratio reached 500.
The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as dielectric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50 μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layer were prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10?6 cm2/(V · s), and the on/off current ratio reached 500.
