摘要
In order to investigate the effect of lanthanum ion implantation on theoxidation behavior of zircaloy at 500℃, Zircaloy specimens were implanted by lanthanum ions with adose range from 5xl0^(16) to 2xl0^(17) ions/cm^2 at room temperature, and then oxidized at 500℃ for100 min. The valence of the oxides in the scale was analyzed by X-ray Photoelectron Spectroscopy(XPS). The phase structures of the oxides in the scale were examined by Glancing Angle X-rayDiffraction (GAXRD). With the increase of implanted lanthanum ions dose, the phase structures in theoxide scale are transformed from monoclinic zirconia to hexagonal one and then to monoclinic oneagain. The measurement of weight gain showed that a similar change from the decreased gain toincreased one again is achieved in the oxidation behavior of lanthanum ion implanted zircaloycompared with that of as-received zircaloy.
In order to investigate the effect of lanthanum ion implantation on theoxidation behavior of zircaloy at 500℃, Zircaloy specimens were implanted by lanthanum ions with adose range from 5xl0^(16) to 2xl0^(17) ions/cm^2 at room temperature, and then oxidized at 500℃ for100 min. The valence of the oxides in the scale was analyzed by X-ray Photoelectron Spectroscopy(XPS). The phase structures of the oxides in the scale were examined by Glancing Angle X-rayDiffraction (GAXRD). With the increase of implanted lanthanum ions dose, the phase structures in theoxide scale are transformed from monoclinic zirconia to hexagonal one and then to monoclinic oneagain. The measurement of weight gain showed that a similar change from the decreased gain toincreased one again is achieved in the oxidation behavior of lanthanum ion implanted zircaloycompared with that of as-received zircaloy.
