期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

A Systematical Approach for Noise in CMOS LNA 被引量：1

低噪声放大器中噪声的系统研究方法(英文)
下载PDF
导出
摘要 A systematic approach is used to analyze the noise in CMOS low noise amplifier(LNA),including channel noise and induced gate noise in MOS devices.A new analytical formula for noise figure is proposed.Based on this formula,the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.Two kinds of noise optimization approaches are performed and applied to the design of a 5 2GHz CMOS LNA. 采用系统研究方法来分析包括MOS器件的沟道噪声和感应栅噪声在内的 CMOS低噪声放大器中的噪声,并提出了一个新的噪声系数解析式.基于此解析式,讨论了分布栅电阻和内部沟道电阻对噪声性能的影响.对噪声性能进行了两种不同的优化,并应用于5 2GHz CMOS低噪声放大器的设计.
作者 冯东 石秉学
机构地区 清华大学微电子学研究所
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第3期487-493,共7页 半导体学报（英文版）
关键词 amplifier noise channel noise channel resistance induced gate noise low noise amplifier noise optimization 放大器噪声 沟道噪声 沟道电阻 感应栅噪声 低噪声放大器 噪声优化
分类号 TN722 [电子电信—电路与系统]
  • 相关文献

参考文献14

  • 1Friis H T.Noise figures of radio receivers.Proceedings of the IRE,1944,32(7):419.
  • 2Gramegna G,Magazzu A,Sclafani G,et al.Ultra-wide dynamic range 1.75dB noise figure,900MHz CMOS LNA.Digest of Technical Papers of ISSCC,2000:380.
  • 3Shaeffer D K,Lee T H.A 15V,1.5GHz CMOS low noise amplifier.IEEE J Solid-State Circuits,1997,32(5):745.
  • 4Tsividis Y.Operation and modeling of the MOS transistor.2nd ed.Boston:WCB/McGrawHill,1998.
  • 5Chan M,Hui K Y,Hu C,et al.A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation.IEEE Trans Electron Devices,1998,45(4):834.
  • 6Tsui H Y,Lau J.SPICE simulation and tradeoffs of CMOS LNA performance with source-degeneration inductor.IEEE Trans Circuits and Systems Ⅱ:Analog and Digital Signal Processing,2000,47(1):62.
  • 7Chen J,Shi B.Impact of intrinsic channel resistance on noise performance of CMOS LNA.IEEE Electron Device Lett,2002,23(1):34.
  • 8Razavi B,Yan R H,Lee K F.Impact of distributed gate resistance on the performance of MOS devices.IEEE Trans Circuits and Systems Ⅰ:Fundamental Theory and Applications,1994,41(11):750.
  • 9Van der Ziel A.Noise in solid state devices and circuits.New York:Wiley,1986.
  • 10Feng D,Shi B.A 2.5-V 2.45/5.25GHz dual-band CMOS LNA.Proceedings of 5th International Conference on ASIC,2003:1110.

同被引文献5

  • 1Shaeffer D K,Lee T H.1.5-Ⅴ 1.5GHz CMOS low noise amplifier[J].IEEE J Sol Sta Circ,1997,32(5):745-759.
  • 2Andreani P,Sjoland H.Noise optimization of an inductively degenerated CMOS low noise amplifier[J].IEEE Trans Circ and Syst Ⅱ:Analog and Dig Sig Proc,2001,48(9):835-841.
  • 3Mou S-X,Ma J-G,Seng Y K,et al.A modified architecture used for input matching in CMOS low noise amplifiers[J].IEEE Trans Circ and SystⅡ:Exp Briefs,2005,52(11):784-788.
  • 4Meyer R G,Mack W D.A 1-GHz BiCMOS RF front-end IC[J].IEEE J Sol Sta Circ,1994,29(3):350-355.
  • 5Lee T H.The design of CMOS radio frequency integrated circuits[M].Cambridge,UK:Cambridge University Press,1998.

引证文献1

Journal of Semiconductors
2005年 第3期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部