Al含量对GaN/Al_xGa_(1-x)N量子点中激子态的影响被引量：17

Influence of Al Content on Exciton Confined in GaN/Al_xGa_(1-x)N Quantum Dots

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摘要利用有效质量方法和变分原理,考虑内建电场和量子点的三维约束效应,研究了Al含量对局域在GaN/AlxGa1-xN量子点中激子性质的影响.结果表明,随着Al含量的增加,GaN/AlxGa1-xN异质界面处的导带不连续性增强,势垒变高,载流子受到的约束增强,激子结合能增加,电子空穴的复合率先增大后减小,且存在最大值.对给定体积的量子点,随其高度的变化激子结合能存在最大值,相应的电子空穴被最有效约束,激子态最稳定. Within the effective-mass approximation,the influence of Al content on exciton states is investigated by means of variational approach.The results show that with the Al content increasing,the barrier becomes higher and the carriers are more strongly confined in the quantum dot.The exciton binding energy increases with the increasing of Al content,and there is a maximum in the electron-hole recombination rate.Also,there is a maximum in the binding energy for a definite volume,where the carriers are the most efficiently confined in the quantum dots.

作者戴宪起黄凤珍郑冬梅

机构地区河南师范大学物理系

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第4期697-701,共5页 半导体学报（英文版）

基金国家自然科学基金(批准号:60476047) 河南省自然科学基金(批准号:974051900)资助项目~~

关键词量子点自发极化和压电极化电子-空穴复合率激子结合能 quantum dots piezoelectricity and spontaneous polarization electron-hole recombination rate exciton binding energy

分类号 O471.3 [理学—半导体物理]

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参考文献17

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