期刊文献+

Optimization of Plasma Etching Parameters and Mask for Silica Optical Waveguides 被引量:1

二氧化硅光波导刻蚀参量及掩膜的优化(英文)
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摘要 Optical waveguides in silica-on-silicon are one of the key elements in optical communications.The processes of deep etching silica waveguides using resist and metal masks in RIE plasma are investigated.The etching responses,including etching rate and selectivity as functions of variation of parameters,are modeled with a 3D neural network.A novel resist/metal combined mask that can overcome the single-layer masks’ limitations is developed for enhancing the waveguides deep etching and low-loss optical waveguides are fabricated at last. 硅基二氧化硅光波导是光通信中的关键器件.采用光刻胶以及金属作为掩膜进行了反应离子刻蚀二氧化硅光波导的工艺研究,获得了刻蚀速率及刻蚀选择比相对各工艺参数变化的三维神经网络模型.利用一种新型的用于二氧化硅深刻蚀的复合双层掩膜结构,克服了许多单层掩膜自身的限制,并利用这一结构制作出低传输损耗的硅基二氧化硅波导.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第6期1104-1110,共7页 半导体学报(英文版)
基金 国家高技术研究发展计划资助项目(批准号:2001AA312020)~~
关键词 reactive ion etching silica-on-silicon optical waveguides 3D neural network 反应离子刻蚀 硅基二氧化硅光波导 三维神经网格
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参考文献10

  • 1Goodman J W,Leonberger F I,Kung S Y,et al. Optical interconnections for VLSI systems. Proc IEEE, 1984,72:850.
  • 2徐永青,梁春广,杨拥军,赵彤.硅基SiO_2光波导[J].Journal of Semiconductors,2001,22(12):1546-1550. 被引量:8
  • 3Liang J J,Ballantyne J M. Self-aligned dry-etching process for waveguide diode ring lasers. J Vac Sei Technol, 1994,B12(5) :2929.
  • 4Wang S B,Wendt A E. Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity. J Vac Sci Technol, 2001,A19(5):2425.
  • 5Kim B, Kwon K H, Park S H. Characterizing metal-masked silica etch process in a CHF3/CF4 inductively coupled plasma.J Vac Sci Technol,1999,A17(5):2593.
  • 6Baldwin S,Patrick R, Williams N. RF peak voltage control at the bias electrode in the LAM TCP 9400/9600 PTX for improved process stability. Proceedings of Plasma Etching for Sub-Quarter Micron Devices, 1999, PV 99-30:55.
  • 7Den S, Kuno T, ho M, et al. Influence on selective SiO2/Si etching of carbon atoms produced by CH4 addition to a C4F8 permanent magnet electron cyclotron resonance etching plasma. J Vac Sci Technol, 1997, A15 (6) : 2880.
  • 8Collard E, Lejuene V, Grandchamp J, et al. C-F incorporated overlayer growth on silicon exposed to a D. C.-excited CF4 plasma. Thin Solid Films, 1990,193:1008.
  • 9Rueger N R,Beulens J J,Schaepkens M,et al. Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF3 in an inductively coupled plasma reactor. J Vac SciTechnol, 1997 ,A15 (4) : 1881.
  • 10Townsend P D,Kelly J C, Hartley N E W. Ion implantation,sputtering and their applications. New York:Academic Press,1976.

二级参考文献1

  • 1Li Y P,IEE Proc Optoelectron,1998年,143卷,5期,263—280页

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