T1系超导体中的载流子浓度与超导电性

Carriers Concentration and Superconductivity in T1 System Superconductors

该文综合评述了在Ｔ１系超导体中价态平衡与固溶度、载流子浓度与超导电性之间的关系，通过对不同价态元素在Ｃａ、Ｓｒ、Ｂａ位的替代规律的总结，对母体化合物的空穴掺杂水平进行了估计，双Ｔ１—Ｏ层的Ｔ１—２２２３和Ｔ１—２２１２化合物处于空穴“欠掺杂态”，而其它化合物则处于空穴的“过掺杂态”，所以高价元素的替代将使空穴浓度下降，对Ｔ１—２２２３和Ｔ１—２２１２相来说，Ｔｃ单调下降。而对其它化合物，Ｔｃ增加，经过一个极值后下降。讨论了元素替代对能带结构、Ｃｕ的平均氧化态的影响。

The relationship between the valent equilibrium and solubility, and carriers concentration and superconductvity in T1 system superconductors were compiled and discussed. The hole doping level in parent compounds were estimated by srmmarising to the different valent ions substitution for Ca, Sr or Ba. The double T1-O layers compounds lay in hole down doping state and other compounds lay in hole over doping state. The high valent elements substitution made the hole carriers concentration decrease,Tc monotonically increase for T1-2223 and T1-2212 compounds and Tc increase, reach a maximum value, then decrease fou other compounds. The effects of element substitution on the band structure and average oxidation state of Cu were discussed.