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Asymptotic of the Solutions of the Initial Boundary Value Problem for the Diffusion Equations for Semiconductors (Ⅱ)

Asymptotic of the Solutions of the Initial Boundary Value Problem for the Diffusion Equations for Semiconductors (Ⅱ)
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摘要 The paper deal with the asymptotic behavior of the solutions to the initial boundary value problem for unipolar drift diffusion equations for semiconductors. Under the proper assumptions on doping profile and initial value, we prove that the smooth solutions to these evolutionary problems tend to the unique stationary solution exponentially as time tends to infinity.
出处 《Chinese Quarterly Journal of Mathematics》 CSCD 北大核心 2005年第3期319-325,共7页 数学季刊(英文版)
关键词 drift diffusion equations initial boundary value problems asymptotic behavior 半导体 扩散方程 边值问题 渐进性
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