摘要
在深入分析共振隧穿二极管(RTD)开关前后内阻变化和RTD串联组合中不同RTD电压分布随总偏压变化的基础上,深化了“遏止(Q uench ing)”的概念。并进一步以此概念说明了RTD/HEM T电路中,单-双稳转换逻辑单元(M OB ILE)、多值逻辑(M VL)文字(L itera l)逻辑门、三态反相器(T ernary inverter)等逻辑单元的工作原理。通过此种分析,证实了“遏止”概念是解释和分析复杂RTD电路原理的强有力工具。以上论证也适用于由其它负阻器件构成的逻辑电路。
On the base of deep analysis on the change of interior resistance on RTD before and after switching, and change of voltage distribution among various devices in the series of connected RTD with bias voltage variation, the concept of “Quenching” has been deepened. And then, The operation principle of some RTD/HEMT circuits, such as MOBILE, MVI. Literal Logic Gate, ternary invertor has been explained by this quenching concept. Through this analysis, it is demonstrated that the quenching concept is a powerful tool for analysis on complex RTD circuits. The discussion mentioned above can be also used in the logic circuits which are composed by other negative differential resistance device.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2005年第3期403-409,共7页
Research & Progress of SSE
基金
天津市应用基础研究重点基金资助项目(043800811)
