Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

Al组分对Al_xGa_(1-x)N/GaN异质结构中二维电子气输运性质的影响(英文)

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摘要 Magnetotransport properties of two-dimensional electron gases （2DEG） in AlxGa1-x N/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility. 在低温和强磁场下,通过磁输运测量研究了不同Al组分调制掺杂Al_xGa_(1-x)N/GaN异质结二维电子气(2DEG)的磁电阻振荡现象.观察到低Al组分异质结中的2DEG有较低的浓度和较高的迁移率.

作者唐宁沈波王茂俊杨志坚徐科张国义桂永胜朱博郭少令褚君浩

机构地区北京大学物理学院人工微结构和介观物理国家重点实验室中国科学院上海技术物理研究所红外物理国家重点实验室

出处《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第2期235-238,共4页 半导体学报（英文版）

基金国家重点基础研究发展规划(批准号:G20000683,G001CB3095) 国家高技术研究发展计划(批准号:2002AA305304) 国家自然科学基金(批准号:60444007,60136020,10374094) 国家杰出青年基金(批准号:60325413) 教育部博士点基金(批准号:20020284023)资助项目~~

关键词 Alx Ga1-x N/GaN heterostructure two-dimensional electron gas transport property AlxGa1-xN/GaN异质结构二维电子气输运性质

分类号 O471 [理学—半导体物理]

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Journal of Semiconductors

2006年第2期

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Influence of Al Composition on Transport Properties of Two-Dimensional Electron Gas in Al_xGa_(1-x)N/GaN Heterostructures

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