期刊文献+

电子束和X射线光刻制作高分辨率微波带片 被引量:6

Fabrication of Micro Zone Plates by E-Beam and X-Ray Lithography
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摘要 在硅为衬底材料的自支撑氮化硅薄膜上,采用阴阳图形互换转移技术,先使用电子束直写方法制作成功了最外环为150nm的阳图形微波带片,然后用同步辐射X射线光刻技术复制成功了最外环为150nm的阴图形微波带片,得到可以应用于ICF诊断技术中的微波带片. This paper introduces a method for fabricating state-of-the-art micro-zone plates(MZP) on free-standing silicon nitride based on silicon using electron beam lithography and positive resist ZEP 520A. A bright field MZP master mask with an outermost width of 150nm is fabricated with an e-beam machine. In order to get the dark field high aspect ratio and the batch product of the MZP,we replicate the MZP mask by using synchrotron radiation X-ray lithography(XRL). Finally,we successfully replicate an MZP for an ICF diagnostics experiment.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第6期1147-1150,共4页 半导体学报(英文版)
基金 国家自然科学基金(批准号:60276019) 国家高技术研究发展计划(批准号:2004AA843082) 教育部"同步辐射创新中心"研究生创新基金资助项目~~
关键词 电子束 X射线光刻 微波带片 菲涅耳波带片 e-beam XRL micro zone plates Fresnel zone plates
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