摘要
在硅为衬底材料的自支撑氮化硅薄膜上,采用阴阳图形互换转移技术,先使用电子束直写方法制作成功了最外环为150nm的阳图形微波带片,然后用同步辐射X射线光刻技术复制成功了最外环为150nm的阴图形微波带片,得到可以应用于ICF诊断技术中的微波带片.
This paper introduces a method for fabricating state-of-the-art micro-zone plates(MZP) on free-standing silicon nitride based on silicon using electron beam lithography and positive resist ZEP 520A. A bright field MZP master mask with an outermost width of 150nm is fabricated with an e-beam machine. In order to get the dark field high aspect ratio and the batch product of the MZP,we replicate the MZP mask by using synchrotron radiation X-ray lithography(XRL). Finally,we successfully replicate an MZP for an ICF diagnostics experiment.
基金
国家自然科学基金(批准号:60276019)
国家高技术研究发展计划(批准号:2004AA843082)
教育部"同步辐射创新中心"研究生创新基金资助项目~~