摘要
用化学法在非晶硅表面形成Ni源,经金属诱导晶化(MIC)得到了大晶粒碟型多晶硅.为改善以此材料作有源层的多晶硅TFT的漏电特性和均匀性,采用动态杂质吸除方法对MIC过程所残留的Ni进行了吸除.通过流程简化,采用6块版工艺,研制出125mmQVGA有源选址有机发光显示的多晶硅TFT选址矩阵基板.
Disk-like large grain poly-si is formed using solution-based MIC (metal-induced crystallization). A Ni gettering treatment technique is adopted to improve the poly-Si material quality. Using this poly-Si material as the active layer, the leakage and uniformity characteristics of TFTs are improved. Additionally, the pixel circuit and their layout of the two TFTs are demonstrated. Adopting a 6-mask process similar to that of the normal a-si TFT AMLCD product line, 125mm QVGA poly-si TFT active matrix panels for OLED are fabricated. A 125mm QVGA AMOLED panel, which can display color video image, is implemented using the active matrix panel.
基金
国家高技术研究发展计划(批准号:2004AA303570)
国家自然科学基金(批准号:60437030)资助项目~~