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125mm彩色AMOLED的多晶硅TFT基板 被引量:6

Fabrication of a 125mm Poly-Si TFT Active-Matrix Driving Color AMOLED
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摘要 用化学法在非晶硅表面形成Ni源,经金属诱导晶化(MIC)得到了大晶粒碟型多晶硅.为改善以此材料作有源层的多晶硅TFT的漏电特性和均匀性,采用动态杂质吸除方法对MIC过程所残留的Ni进行了吸除.通过流程简化,采用6块版工艺,研制出125mmQVGA有源选址有机发光显示的多晶硅TFT选址矩阵基板. Disk-like large grain poly-si is formed using solution-based MIC (metal-induced crystallization). A Ni gettering treatment technique is adopted to improve the poly-Si material quality. Using this poly-Si material as the active layer, the leakage and uniformity characteristics of TFTs are improved. Additionally, the pixel circuit and their layout of the two TFTs are demonstrated. Adopting a 6-mask process similar to that of the normal a-si TFT AMLCD product line, 125mm QVGA poly-si TFT active matrix panels for OLED are fabricated. A 125mm QVGA AMOLED panel, which can display color video image, is implemented using the active matrix panel.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第8期1514-1518,共5页 半导体学报(英文版)
基金 国家高技术研究发展计划(批准号:2004AA303570) 国家自然科学基金(批准号:60437030)资助项目~~
关键词 大晶粒 碟型多晶硅 薄膜晶体管 有机发光像素电路 有源选址矩阵 large grain size disk-like poly-Si TFT OLED pixel circuit active-matrix
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参考文献7

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