摘要
The microwave dielectric properties of ZrO2-SnO2-TiO2 （ZST） system ceramics were studied as a function of the amount of Sb2O5 dopant. With the addition of 0-0.5% Sb2O5（molar ratio）, the substitution of Ti4^＋ ions with Sb^5＋ ions decreased the sintering temperature and increased the quality factor Q due to the reduction of oxygen vacancies, When the amount of Sb^5＋ increased further （above 0.5%）, Q was decreased by increasing the electron concentration. When the system doped with 0.5% Sb2O5 was sintered at 1 150℃ for 6 h, the relative dielectric constant ε, Qf0, and the temperature coefficient of resonant frequency （TCF） were 38.46, 44 500 GHz, 20.0×10^-6/℃, respectively, at 6 GHz,
The microwave dielectric properties of ZrO2-SnO2-TiO2 （ZST） system ceramics were stu- died as a function of the amount of Sb2O5 dopant. With the addition of 0—0.50/0 Sb2O5 （molar ratio）, the substitution of Ti 4+ ions with Sb 5+ ions decreased the sintering temperature and increased the quality factor Q due to the reduction of oxygen vacancies. When the amount of Sb 5+ increased further （above 0.50/0）, Q was decreased by increasing the electron concentration. When the system doped with 0.50/0 Sb2O5 was sintered at 1 150 ℃ for 6 h, the relative dielectric constant ε, Qf0, and the temperature coefficient of resonant frequency （TCF） were 38.46, 44 500 GHz,20.0×10 -6 /℃, respectively, at 6 GHz.
基金
Supported by Natural Science Foundation of Tianjin (No.06YFJMJC01000)
the High Technique Research and Development Pro-gram of China (No.2001AA325110).
